 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs Single MOSFET Die IXFK 24N100 IXFX 24N100 VDSS ID25 RDS(on) = 1000 V = 24 A = 0.39 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 20 30 24 96 24 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D (TAB) D TO-264 AA (IXFK) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.0 V 100 nA TJ = 25C TJ = 125C 100 A 2 mA 0.39 VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 2 Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l (c) 2002 IXYS All rights reserved 98598B (8/02) IXFK 24N100 IXFX 24N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 15 22 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 750 260 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 35 75 21 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 55 135 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24 96 1.5 250 A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline IF = IS, -di/dt = 100 A/s, VR = 100 V 1.0 8 Dim. Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 24N100 IXFX 24N100 20 TJ = 25C VGS = 8-10V 7V 50 40 TJ = 25C VGS = 10V 9V 8V 7V 15 ID - Amperes ID - Amperes 6V 30 20 6V 10 5 5V 10 0 5V 0 0 2 4 6 8 10 0 5 10 15 20 25 VDS - Volts VCE - Volts Fig.1 Output Characteristics @ Tj = 25C 20 16 Fig.2 Extended Output Characteristics @ Tj = 25C 20 TJ = 125C VGS = 10V 9V 8V 7V 6V 15 ID - Amperes 12 8 4 5V ID - Amperes 10 TJ = 125OC TJ = 25OC 5 0 0 4 8 12 16 20 0 3 4 5 6 7 8 VDS - Volts VGS - Volts Fig.3 Output Characteristics @ Tj = 25C Fig.4 Drain Current vs Gate Source Voltage 2.4 2.2 RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 ID = 24A VGS = 10V ID = 12A TJ - Degrees C Fig.5 Temperature Dependence of Drain-to- IXFK 24N100 IXFX 24N100 15 12 VDS = 500 V ID = 12 A IG = 10 mA 20000 10000 Ciss Capacitance - pF f = 1MHz VGS - Volts 9 6 3 0 Coss 1000 Crss 100 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Fig. 6 Gate Charge Characteristic 50 30 25 20 15 10 5 Fig. 7 Capacitance Curves 40 ID - Amperes 30 TJ = 125oC TJ = 25oC 20 10 0 ID - Amperes 2.5 0.0 0.5 1.0 1.5 2.0 0 -50 -25 0 25 50 75 100 125 150 VSD - Volts Case Temperature - oC Fig. 8 Drain Current vs Drain to Source Voltage 0.300 0.100 Fig. 9 Drain Current vs Case Temperature R(th)JC - K/W 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Resistance |
Price & Availability of IXFK24N10007
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |